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| Philips Semiconductors Product specification Thyristors BT151U series C GENERAL DESCRIPTION Passivated thyristors in a plastic envelope, intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching. QUICK REFERENCE DATA SYMBOL VDRM, VRRM IT(AV) IT(RMS) ITSM PARAMETER BT151URepetitive peak off-state voltages Average on-state current RMS on-state current Non-repetitive peak on-state current MAX. 500C 500 7.5 12 100 MAX. 650C 650 7.5 12 100 MAX. 800C 800 7.5 12 100 UNIT V A A A PINNING - SOT533, (I-PAK) PIN NUMBER 1 2 3 tab DESCRIPTION cathode anode gate PIN CONFIGURATION SYMBOL a k 1 2 3 MBK915 g anode Top view LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. half sine wave; Tmb 104 C all conduction angles half sine wave; Tj = 25 C prior to surge t = 10 ms t = 8.3 ms t = 10 ms ITM = 20 A; IG = 50 mA; dIG/dt = 50 mA/s -40 MAX. -500C -650C -800C 5001 6501 800 7.5 12 100 110 50 50 2 5 5 0.5 150 125 UNIT V A A A A A2s A/s A V W W C C VDRM, VRRM Repetitive peak off-state voltages IT(AV) IT(RMS) ITSM Average on-state current RMS on-state current Non-repetitive peak on-state current I2t dIT/dt IGM VRGM PGM PG(AV) Tstg Tj I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak reverse gate voltage Peak gate power Average gate power over any 20 ms period Storage temperature Junction temperature 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/s. April 2004 1 Rev 1.000 Philips Semiconductors Product specification Thyristors BT151U series C THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER CONDITIONS MIN. TYP. 70 MAX. 1.3 UNIT K/W K/W K/W Thermal resistance junction to mounting base Thermal resistance in free air junction to ambient STATIC CHARACTERISTICS Tj = 25 C unless otherwise stated SYMBOL IGT IL IH VT VGT ID, IR PARAMETER Gate trigger current Latching current Holding current On-state voltage Gate trigger voltage Off-state leakage current CONDITIONS VD = 12 V; IT = 0.1 A VD = 12 V; IGT = 0.1 A VD = 12 V; IGT = 0.1 A IT = 23 A VD = 12 V; IT = 0.1 A VD = VDRM(max); IT = 0.1 A; Tj = 125 C VD = VDRM(max); VR = VRRM(max); Tj = 125 C MIN. 0.25 TYP. 2 10 7 1.44 0.6 0.4 0.1 MAX. 15 40 20 1.75 1.5 0.5 UNIT mA mA mA V V V mA DYNAMIC CHARACTERISTICS Tj = 25 C unless otherwise stated SYMBOL dVD/dt PARAMETER Critical rate of rise of off-state voltage Gate controlled turn-on time Circuit commutated turn-off time CONDITIONS VDM = 67% VDRM(max); Tj = 125 C; exponential waveform Gate open circuit RGK = 100 ITM = 40 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/s VD = 67% VDRM(max); Tj = 125 C; ITM = 20 A; VR = 25 V; dITM/dt = 30 A/s; dVD/dt = 50 V/s; RGK = 100 MIN. TYP. MAX. UNIT tgt tq 50 200 - 130 1000 2 70 - V/s V/s s s April 2004 2 Rev 1.000 Philips Semiconductors Product specification Thyristors BT151U series C 15 Ptot (W) 10 conduction angle form factor 105.5 () 30 30 60 90 120 180 120 100 80 60 ITSM / A IT ITSM (a) 4 4.0 2.8 2.2 1.9 1.57 a = 1.57 1.9 2.2 2.8 4 Tmb(max) (C) 112 time T Tj initial = 25 C max 5 118.5 40 20 0 0 2 4 6 IT(AV) (A) 8 125 0 1 10 100 Number of half cycles at 50Hz 1000 Fig.1. Maximum on-state dissipation, Ptot, versus average on-state current, IT(AV), where a = form factor = IT(RMS)/ IT(AV). Fig.4. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50 Hz. 1000 ITSM / A 25 IT(RMS) / A 20 dI T /dt limit 100 I TSM T time 15 IT 10 5 Tj initial = 25 C max 10 10us 100us T/s 1ms 10ms 0 0.01 0.1 1 surge duration / s 10 Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp 10ms. Fig.5. Maximum permissible repetitive rms on-state current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Tmb 100 C. VGT(Tj) VGT(25 C) 15 IT(RMS) (A) 10 104 C 1.6 1.4 1.2 1 5 0.8 0.6 0 -50 0 50 100 Tmb (C) 150 0.4 -50 0 50 Tj / C 100 150 Fig.3. Maximum permissible rms current IT(RMS) , versus mounting base temperature Tmb. Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25C), versus junction temperature Tj. April 2004 3 Rev 1.000 Philips Semiconductors Product specification Thyristors BT151U series C 3 2.5 2 1.5 1 0.5 IGT(Tj) IGT(25 C) 30 IT (A) Tj = 125 C Tj = 25 C typ 20 max 10 Vo = 1.06 V Rs = 0.0304 ohms 0 -50 0 50 Tj / C 100 150 0 0 0.5 1 1.5 VT (V) 2 Fig.7. Normalised gate trigger current IGT(Tj)/ IGT(25C), versus junction temperature Tj. IL(Tj) IL(25 C) Fig.10. Typical and maximum on-state characteristic. 3 2.5 2 BT145 10 Zth(j-mb) (K/W) 1 0.1 1.5 1 0.5 0 -50 0.001 10us P D tp 0.01 t 0 50 Tj / C 100 150 0.1ms 1ms 10ms 0.1s 1s tp (s) 10s Fig.8. Normalised latching current IL(Tj)/ IL(25C), versus junction temperature Tj. IH(Tj) IH(25 C) Fig.11. Transient thermal impedance Zth j-mb, versus pulse width tp. dVD/dt (V/us) 10000 3 2.5 1000 2 RGK = 100 Ohms 1.5 1 0.5 0 -50 10 100 gate open circuit 0 50 Tj / C 100 150 0 50 Tj / C 100 150 Fig.9. Normalised holding current IH(Tj)/ IH(25C), versus junction temperature Tj. Fig.12. Typical, critical rate of rise of off-state voltage, dVD/dt versus junction temperature Tj. April 2004 4 Rev 1.000 Philips Semiconductors Product specification Thyristors BT151U series C MECHANICAL DATA Plastic single-ended package (Philips version of I-PAK); 3 leads (in-line) SOT533 E E1 D1 mounting base D A1 A Q L 1 e1 e 2 b 3 wM c 0 2.5 scale 5 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 2.38 2.22 A1 0.89 0.71 b c D 7.28 6.94 D1 1.06 0.96 E 6.73 6.47 E1 5.36 5.26 e e1 L 9.8 9.4 Q 1.00 1.10 0.89 0.56 0.71 0.46 4.57 2.285 OUTLINE VERSION SOT533 REFERENCES IEC JEDEC TO-251 EIAJ EUROPEAN PROJECTION ISSUE DATE 99-02-18 Fig.13. SOT533, (I-PAK). Pin 2 connected to mounting base. April 2004 5 Rev 1.000 Philips Semiconductors Product specification Thyristors BT151U series C DEFINITIONS DATA SHEET STATUS DATA SHEET STATUS2 Objective data PRODUCT STATUS3 Development DEFINITIONS This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A Preliminary data Qualification Product data Production Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 2004 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 2 Please consult the most recently issued datasheet before initiating or completing a design. 3 The product status of the device(s) described in this datasheet may have changed since this datasheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. April 2004 6 Rev 1.000 |
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